Two decades ago, epigraphene (EG) nanoelectronics was proposed at Georgia Tech as a successor of silicon because this 2D material can exploit currently unutilized properties of charge carriers, like quantum coherence and the electronic spin, to realize faster, smaller and more energy efficient devices than is possible with silicon. In a recent breakthrough paper EG grown on a silicon carbide was shown to be a record breaking 2D semiconductor that is uniquely compatible with conventional nanoelectronics production methods. Working with the pioneers of EG, my research project proposes to demonstrate low power semiconducting epigraphene (SEG) tunnelling field effect transistors (TFET), with record breaking speeds. At GT I will grow chip-scale SEG, fabricate and optimise conventional SEG FETs, followed with development of prototype TFETs devices. SEG will be interconnected with epigraphene nanoribbons that have extraordinary ballistic transport properties of which the physics is still not well understood. This knowledge will then be transferred to Grenoble where electronic spin and quantum coherence properties will be demonstrated in intercalated heterostructures that can be incorporated in advanced SEG devices. These properties, including edge state properties will be investigated using a variety of transport and local probe techniques to provide a solid foundation for SEG nanoelectronics. This proposal has a critical scientific impact especially in elucidating the nature of the graphene edge state with quantum coherent properties easily assessable cryogenic temperatures (≈10K) and 10 micron device length scales that are relevant for practical quantum computing. The development of epigraphene nanoelectronics will revolutionize electronics, and as was successfully argued in the 1B€ European Graphene Flagship program, it will have a huge societal and economic impact for Europe. It will stimulate a worldwide SEG effort and put me at the forefront of this emerging field.

The EU goal of cutting greenhouse gas to zero net emissions by 2050 will put particular pressure on energy conversion and storage systems. Reversible Solid Oxide Cells (rSOCs) capable of efficiently operating in two modes: as solid oxide fuel cell and as solid oxide electrolyser cell, are of particular interest. To operate the cells with high efficiency and long duration, scrutiny of potential oxygen electrode materials and development of novel materials for intermediate temperature (IT)-SOCs is essential. However, a methodology to screen the oxygen surface exchange and bulk diffusion kinetics with a ubiquitous, easily accessible and reliable technique is still in high demand. The fellowship aims to address these urgent demands towards a green economy. Two chemical vapour deposition methods, metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD), will be wisely combined for obtaining thin film preparation with improved nano-morphology. Pr-doped La2NiO4±δ thin films (LPNO) with surface modification will be prepared, to improve the electrochemical properties while maintaining good ionic conductivity. The development of the unique in situ isotopic exchange Raman spectroscopy (IERS) technique and apparatus, will be the second core task of this project. This novel Raman technique will be used as an alternative and complementary technique to the conventional approach, proving more efficient, accessible and nondestructive in situ measurements. For the candidate, as part of her continuing interest in electroceramics, the project will link perfectly with her previous experience and will provide her with the opportunity of applying her in depth knowledge to develop novel new skills in the area of solid state ionics, especially for nanoscale thin films. On the long term she will be able to extend and broaden her existing academic and industrial network and advance her career prospects.